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| NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features: D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz D High Current-Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation (TC = +75C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Note 1. Total Device Dissipation at TA = +25C is 1 Watt. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage VCEO(sus) IC = 5mA, IB = 0 VCER(sus) IC = 5mA, RBE = 10, Note 2 Collector Cutoff Current ICEO ICEX Emitter Cutoff Current IEBO VCE = 15V, IB = 0 VCE = 15V, VBE = -1.5V, TC = +150C VCE = 35V, VBE = -1.5V VBE = 3V, IC = 0 20 40 - - - - - - - - - - - - 20 5 5 100 V V A mA mA A Symbol Test Conditions Min Typ Max Unit Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain hFE IC = 360mA, VCE = 5V IC = 50mA, VCE = 15V Dynamic Characteristics Current-Gain Bandwidth Product Collector-Base Capacitance Noise Figure Functional Test Common-Emitter Amplifier Voltage Gain Power Input Gve Pin IC = 50mA, VCC = 15V, f = 50 to 216MHz IC = 50mA, VCC = 15V, RS = 50, Pout = 1.26mW, f = 200MHz 11 - - - - 0.1 dB mW fT Ccb NF IC = 50mA, VCE = 15V, f = 200MHz VCB = 15V, IE = 0, f = 1MHz IC = 10mA, VCE = 15V, f = 200MHz 1200 - - - 1.8 3 - 3.5 - MHz pF dB 5 40 - - - 120 Symbol Test Conditions Min Typ Max Unit .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
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